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SOT-323 Plastic-Encapsulate MOSFETS N-Channel 20-V(D-S) MOSFET SOT-323 FEATURE TrenchFET Power MOSFET APPLICATIONS Load Switch for Portable Devices DC/DC Converter MARKING S2 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 Continuous Drain Current ID 2.1 A Continuous Source-Drain Current(Diode Conduction) IS 0.6 Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient (t 5s) R JA 357 /W Operating Junction TJ 150 Storage Temperature TSTG -55 +150 1 of 4 Copyright All right reserved Heyuan China Base Electronics Technology Co., Ltd. Electrical characteristics (Ta=25 unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =10 A 20 V Gate... ещё ⇒

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