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Plastic-Encapsulate MOSFETS N-Channel MOSFET ID V(BR)DSS RDS(on)MAX 380m @ 4.5V 20V 450m @2.5V 0.75A 800m @1.8V FEATURES APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Electronics Operated at Low Logic Level Gate Drive Logic Level Shift MARKING Equivalent Circuit Maximum ratings (Ta=25 unless otherwise noted) Symbol Value Parameter Unit Drain-Source Voltage VDS 20 V Typical Gate-Source Voltage VGS 12 V Continuous Drain Current (note 1) ID 0.75 A Pulsed Drain Current (tp=10 s) IDM 1.8 A Power Dissipation (note 1) PD 350 mW Thermal Resistance from Junction to Ambient (note 1) R JA 357 /W Operation Junction and Storage Temperature Range TJ,TSTG -55 +150 Lead Temperature f... ещё ⇒

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