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Plastic-Encapsulate MOSFETS N-Channel MOSFET I V(BR)DSS RDS(on)MAX D 380 m @4.5V 20V 0.75A m 450 @2.5V 800 m @1.8V APPLICATION FEATURE Drivers Relays, Solenoids, High-Side Switching Lamps, Hammers, Displays, Memories Low On-Resistance Battery Operated Systems Low Threshold Power Supply Converter Circuits Fast Switching Speed Load/Power Switching Cell Phones, Pagers 34K MARKING Equivalent Circuit Maximum ratings (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source voltage V 20 DSS V 12 Typical Gate-Source Voltage V GS Drain Current-Continuous I 0.75 D A Drain Current -Pulsed(note1) I 1.5 DM Power Dissipation (note 2) P 200 mW D Thermal Resistance from Junction to Ambient R 625 /W JA Storage Temperature T 150 j Junction Temperature Tstg -55 +150 1 of 4 Copyright A... ещё ⇒

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