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SOT-23 Plastic-Encapsulate MOSFETS N-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability 1. GATE 2. SOURCE 3. DRAIN MARKING 3400 Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 V Continuous Drain Current ID 5.8 A Drain Current-Pulsed (note 1) IDM 30 A Power Dissipation PD 350 mW Thermal Resistance from Junction to Ambient (note 2) R JA 357 /W Junction Temperature TJ 150 Storage Temperature TSTG -55 +150 1 of 4 Copyright All right reserved Heyuan China Base Electronics Technology Co., Ltd. Electrical characteristics (Ta=25 unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Off Characteristic... ещё ⇒

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 bc3400.pdf Проектирование, MOSFET, Мощность

 bc3400.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bc3400.pdf База данных, Инновации, ИМС, Транзисторы