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SOT-23 Plastic-Encapsulate MOSFETS P-Channel Enhancement Mode Field Effect Transistor General Description SOT-23 The BC3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. 1. GATE 2. SOURCE 3. DRAIN MARKING 3407 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID -4.1 A Power Dissipation PD 350 mW Thermal Resistance from Junction to Ambient R JA 357 /W Junction Temperature TJ 150 Storage Temperature Tstg -55 +150 1 of 4 Copyright All right reserved Heyuan China Base Electronics Technology Co., Ltd. Electrical characteristics (Ta=25 unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Sta... ещё ⇒

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 bc3407.pdf Проектирование, MOSFET, Мощность

 bc3407.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bc3407.pdf База данных, Инновации, ИМС, Транзисторы