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Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET SOT-23 ID V R MAX (BR)DSS DS(on) @-4.5V 50m 60m @-2.5V -20 V -4A 1. GATE @-1.8V 100m 2. SOURCE 3. DRAIN APPLICATION FEATURE Load switch and in PWM applicatopns Excellent RDS(ON), low gate charge,low gate voltages MARKING Equivalent Circuit D G S Maximum ratings (T =25 unless otherwise noted) a Value Parameter Symbol Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage V 8 GS Continuous Drain Current (t 10s) ID -4.0 A Maximum Power Dissipation (t 10s) PD 0.35 W Thermal Resistance from Junction to Ambient R 357 /W JA Operating Junction Temperature T 150 J Storage Temperature T -55 +150 STG 1 of 4 Copyright All right reserved Heyuan China Base Electronics Technology Co., Ltd. MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified ... ещё ⇒

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