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Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23-6L 25m @4.5V 6A 19 V @2.5V 32m FEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and Current Handing Capability Surface Mount Package MARKING Equivalent Circuit G1 D1,D2 G2 4 6 5 1 3 2 S1 D1,D2 S2 ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 19 V Gate-Source Voltage VGS 10 V Continuous Drain Current ID 6 A Pulsed Drain Current (note 1) IDM 25 A Thermal Resistance from Junction to Ambient (note 2) R JA 357 /W Junction Temperature TJ 150 Storage Temperature TSTG -55 +150 Lead Temperature for Soldering Purposes(1/8 from case for 10 s) TL 260 1 of 4... ещё ⇒

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 bc8205.pdf Проектирование, MOSFET, Мощность

 bc8205.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bc8205.pdf База данных, Инновации, ИМС, Транзисторы