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SOT-36 3 Plastic-Encapsulate MOSFETS CB230 1D Dual P-CHANNEL MOSFET SOT-363 FEATURE 6 5 TrenchFET Power MOSFET 4 1 2 APPLICATIONS 3 z Load Switch for Portable Devices z DC/DC Converter Equivalent Circuit MARKING 1DW 6 5 4 D2 G1 S1 S2 G2 D1 1 2 3 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 ID -2.1 Continuous Drain Current Pulsed Drain Current IDM -4.8 A Continuous Source-Drain Diode Current IS -0.72 Maximum Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient(t R 357 5s) JA /W Junction Temperature TJ 150 Storage Temperature Tstg -55 +150 1 of 4 Copyright All right reserved Heyuan China Base Electronics Technology Co., Ltd. Electrical characteristics (Ta=25 unless otherwise noted) ... ещё ⇒

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 cb2301dw.pdf Проектирование, MOSFET, Мощность

 cb2301dw.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 cb2301dw.pdf База данных, Инновации, ИМС, Транзисторы