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Plastic-Encapsulate MOSFETS P-Channel MOSFET I V(BR)DSS RDS(on)MAX D SOT-523 m @-4.5V 950 -20V -0.66A m 1150 @-2.5V 3300m @-1.8V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing, Logic Switching P-Channel Switch with Low R (on) DS Battery Management for Ultra Small Operated at Low Logic Level Gate Drive Portable Electronics MARKING Equivalent Circuit D G 39KB S Maximum ratings (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Typical Gate-Source Voltage VGS 12 V Continuous Drain Current (note 1) I -0.66 A D Pulsed Drain Current (t =10 s) IDM -1.2 A p Power Dissipation (note 1) P 150 mW D Thermal Resistance from Junction to Ambient (note 1) R JA 833 /W Junction Temperature T 150 ... ещё ⇒

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 cb3139ktb.pdf Проектирование, MOSFET, Мощность

 cb3139ktb.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

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