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2SC3357 NPN Silicon RF Transistor FEATURES Low Noise and High Gain NF = 1.1 dB TYP., G = 8.0 dB TYP. a @V = 10 V, I = 7 mA, f = 1.0 GHz CE C NF = 1.8 dB TYP., G = 9.0 dB TYP. a @V = 10 V, I = 40 mA, f = 1.0 GHz CE C APPLICATIONS SOT-89 Designed for low noise amplifier at VHF, UHF and CATV band. MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Rating Unit Collector-base voltage V 20 V CBO Collector-emitter voltage V 12 V CEO Emitter-base voltage V 3.0 V EBO Collector current I 100 mA C Total power dissipation P * 1.2 W T Junction temperature T 150 j Storage temperature T -65 to +150 stg Thermal Resistance R * 62.5 /W th(j-a) * mounted on 16 cm2 X 0.7 mm(t) Ceramic Substr