Скачать даташит для 2sc3356k-b_2sc3356k-c_2sc3356k-d:

NPN N RF TRA N SILICON ANSISTOR 3 U equency low sistor Ultra high fre w noise trans Silicon epitax process. xial bipolar p H gain, low no High power g oise figure, hi c range and ideal current characteris igh dynamic n stics, SC-59 chip p inly used in VHF, UHF and CATV 2 package, mai i cy wideband amplifier. high frequenc d low noise a 1 SC C-59 Fea 1 Ba 2 Em 3 C ature ase mitter Collector High 1e 2 dB V h gain S21 TYP. Value is 11d @ VCE=10V IC=20mA f=1GHz Low . 5dB V w noise NF TYP. Value is 1.5 @ VCE=10V IC=7mA f=1GHz fT (T TYP. Value is 7G @ VCE=10V IC=20mA f=1GHz TYP.) P GHz V Abs ings TA=25 Unless Otherw solute Maximum Rati wise noted PARAMETER SYMBLE MAXIM U R E MUM VALUE UNIT Coll breakdown vo VCBO 20 V lector-base b oltage Coll er breakdown VCEO 12 V lector-emitte n voltage