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SPTECH Product Specification SPTECH Silicon NPN Power Transistor TIP35C DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP36C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current -Continuous 25 A C I Collector Current-peak 40 A CM I Base Current 5 A B P Collector Power Dissipation@ T =25 125 W C C T Junction Temperature 150 j T Storage Temperature -65 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 1.