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IRLR2905TR www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbol Limit Unit VGS Gate-Source Voltage 20 V TC = 25 C 35 ID Continuous Drain Current (TJ = 175 C)b TC = 100 C 28 IDM Pulsed Drain Current 100 A IS Continuous Source Current (Diode Conduction) 23 IAS Avalanche Current 20 Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH EAS 20 mJ TC = 25 C 100 PD Maximum Power Dissipation W TA = 25 C 3a TJ, Tstg Operating Junction and Storage Temperature Range - 55 to 175 C THERMAL RESISTANCE RATINGS