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IRLR2905ZTR www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Source Voltage 20 V TC = 25 C 50 ID Continuous Drain Current (TJ = 175 C)b TC = 100 C 45a IDM Pulsed Drain Current 100 A IS Continuous Source Current (Diode Conduction) 50a IAS Avalanche Current 50 Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH EAS 125 mJ TC = 25 C 136 PD Maximum Power Dissipation W TA = 25 C 3b, 8.3b, c TJ, Tstg Operating Junction and Storage Temperature Range - 55 to 175 C THERMAL RESISTANCE RATINGS Parameter