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Скачать даташит для dh025n03_dh025n03f_dh025n03e_dh025n03i_dh025n03b_dh025n03d:

dh025n03_dh025n03f_dh025n03e_dh025n03i_dh025n03b_dh025n03ddh025n03_dh025n03f_dh025n03e_dh025n03i_dh025n03b_dh025n03d

DH025N03/DH025N03F/DH025N03E DH025N03I/DH025N03B/DH025N03D 150A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2.5m DS(on) (TYP) standard. 1 3 S I = 150A D 2 Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V test DS TO-220C TO-220F TO-262 3 Applications Power switching applications Inverter management system Electric tools Automotive electronics TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Ratings (Tc=25 ,unless otherwise noted) Rating DH025N03 Parameter Symbol Units DH025N0 DH025N03I/DH025N03E

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 dh025n03 dh025n03f dh025n03e dh025n03i dh025n03b dh025n03d.pdf Проектирование, MOSFET, Мощность

 dh025n03 dh025n03f dh025n03e dh025n03i dh025n03b dh025n03d.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 dh025n03 dh025n03f dh025n03e dh025n03i dh025n03b dh025n03d.pdf База данных, Инновации, ИМС, Транзисторы

 

 

 


 
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