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RoHS DGW40N120CTH COMPLIANT IGBT Modules V 1200 V CE I 40 A C V I =40A 2.10 V CE(SAT) C Applications High frequency switching application Circuit Resonant converters Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temperature coefficient Including fast & soft recovery anti-parallel FWD Maximum Ratings Parameter Symbol Value Unit V 1200 V CE Collector-Emitter Breakdown Voltage DC Collector Current, limited by T jmax 80 A T = 25 C C I C 40 T = 100 C C Diode Forward Current, limited by T jmax 80 A T = 25 C C I F 40 T = 100 C C V GE 20 V Continuous Gate-Emitter Voltage V GE 30 V Transient Gate-Emitter Voltage Turn off Safe Operating Area V 1

 

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 dgw40n120cth.pdf Проектирование, MOSFET, Мощность

 dgw40n120cth.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 dgw40n120cth.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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