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DC COMPONENTS CO., LTD. DMBT2222 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 3 2 = Emitter .063(1.60) .108(0.65) .055(1.40) .089(0.25) 3 = Collector 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85) Characteristic Symbol Rating Unit .091(2.30) .067(1.70) Collector-Base Voltage VCBO 60 V .118(3.00) Collector-Emitter Voltage VCEO 30 V .110(2.80) .0043(0.11) Emitter-Base Voltage VEBO 5 V .051(1.30) .0035(0.09) .035(0.90) Collector Current IC 600 mA Total Power Dissipation PD 250 mW .026(0.65) .004 .027(0.67) Max .010(0.25) o (0.10) .013(0.32) Junction Temperature TJ +150 C o Dimensions in inches and (millimeters) Storage Temperature TSTG -55 to +150 C Electrical Ch