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November 2008 UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2 Features Description RDS(on) = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 65nC) DMOS technology. Low Crss ( Typ. 32pF) This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- Fast Switching mance, and withstand high energy pulse in the avalanche and 100% Avalanche Tested commutation mode. These devices are well suited for high effi- cient switching mode power supplies and active power factor Improved dv/dt Capability correction. RoHS Compliant D G TO-3PN G D S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings Units