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November 2008UniFETTMFDA24N50FtmN-Channel MOSFET 500V, 24A, 0.2Features Description RDS(on) = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 65nC)DMOS technology. Low Crss ( Typ. 32pF)This advance technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor- Fast Switchingmance, and withstand high energy pulse in the avalanche and 100% Avalanche Testedcommutation mode. These devices are well suited for high effi-cient switching mode power supplies and active power factor Improved dv/dt Capabilitycorrection. RoHS CompliantDGTO-3PNG D SSMOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings Units