Скачать даташит для fdd6676s:

December 2002 FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK 78 A, 30 V RDS(ON) = 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Low gate charge RDS(ON) and low gate charge. The FDD6676S includes an integrated Schottky diode using Fairchild s monolithic SyncFET technology. Fast Switching Applications High performance trench technology for extremely low RDS(ON) DC/DC converter D D G G S D-PAK TO-252 (TO-252) S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 16 V ID Drain Current Continuous (No