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December 2002 FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK 78 A, 30 V RDS(ON) = 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Low gate charge RDS(ON) and low gate charge. The FDD6676S includes an integrated Schottky diode using Fairchilds monolithic SyncFET technology. Fast Switching Applications High performance trench technology for extremely low RDS(ON) DC/DC converter DDGGSD-PAKTO-252(TO-252)SAbsolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 16 V ID Drain Current Continuous (No