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July 2008 FJP13007 High Voltage Fast-Switching NPN Power Transistor High Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power Supply TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A IB Base Current 4 A PC Collector Dissipation (TC = 25 C) 80 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 150 C 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FJP13007 Rev. A 1 FJP13007 High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics TC = 25 C unless otherwise noted