Скачать даташит для fjp13007:

July 2008FJP13007High Voltage Fast-Switching NPN Power TransistorHigh Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 9 VIC Collector Current (DC) 8 AICP Collector Current (Pulse) 16 AIB Base Current 4 APC Collector Dissipation (TC = 25C) 80 WTJ Junction Temperature 150 CTSTG Storage Temperature -65 ~ 150 C 2008 Fairchild Semiconductor Corporation www.fairchildsemi.comFJP13007 Rev. A 1 FJP13007 High Voltage Fast-Switching NPN Power TransistorElectrical Characteristics TC = 25C unless otherwise noted