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April 2000 TM QFET QFET QFET QFET FQD10N20 / FQU10N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control. D D G D-PAK I-PAK G S FQD Series G FQU Series D S S Ab