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HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only Short Circuit Rating moderately between 25oC and 150oC. Low Conduction Loss The IGBT is ideal for many high voltage switching Related Literature applications operating at moderate frequencies where low - TB334 Guidelines for Soldering Surface Mount conduction losses are essential, such as AC and DC motor Components to PC