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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching 600V Switching SOA Capability devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC impedance of a MOSFET and the low on-state conduction Low Conduction Loss loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The Temperature Compensating SABER Model IGBT used is the development type T