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HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching >100kHz Operation at 390V, 30A device combining the best features of MOSFETs and bipolar 200kHz Operation at 390V, 18A transistors. This device has the high input impedance of a 600V Switching SOA Capability MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC moderately between 25oC and 150oC. Low Conduction Loss This IGBT is ideal for many high voltage switching Temperature Compensating SABER Model applications operating at high frequencies where low www.fairchildsemi.com conduction losses are essential. This device has been optimized for high frequency switch mode