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HGTG30N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGTG30N60A4 is a MOS gated high voltage switching >100kHz Operation at 390V, 30Adevice combining the best features of MOSFETs and bipolar 200kHz Operation at 390V, 18Atransistors. This device has the high input impedance of a 600V Switching SOA CapabilityMOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oCmoderately between 25oC and 150oC. Low Conduction LossThis IGBT is ideal for many high voltage switching Temperature Compensating SABER Modelapplications operating at high frequencies where low www.fairchildsemi.comconduction losses are essential. This device has been optimized for high frequency switch mode