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HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 63A, 600V at TC = 25oC The HGTG30N60C3D is a MOS gated high voltage Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC switching device combining the best features of MOSFETs Short Circuit Rating and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction Low Conduction Loss loss of a bipolar transistor. The much lower on-state voltage Hyperfast Anti-Parallel Diode drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode Packaging used in anti-parallel with the IGBT is the development type JEDEC STYLE TO-247 TA49053. The IGBT is ideal for many high voltage switching applications E op