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HGTG30N60C3DData Sheet January 2009 File Number 4041.263A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 63A, 600V at TC = 25oCThe HGTG30N60C3D is a MOS gated high voltage Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oCswitching device combining the best features of MOSFETs Short Circuit Ratingand bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction Low Conduction Lossloss of a bipolar transistor. The much lower on-state voltage Hyperfast Anti-Parallel Diodedrop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode Packagingused in anti-parallel with the IGBT is the development type JEDEC STYLE TO-247TA49053.The IGBT is ideal for many high voltage switching applications Eop