Скачать даташит для hgtp12n60c3_hgt1s12n60c3:

HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150oC high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower Short Circuit Rating on-state voltage drop varies only moderately between 25oC Low Conduction Loss and 150oC. The IGBT is ideal for many high voltage switching Packaging applications operating at moderate frequencies where low JEDEC TO-220AB conduction losses are essential, such as AC and DC motor EMITTER controls, power supplies and drivers for s