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HGTP12N60C3, HGT1S12N60C3SData Sheet December 200124A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150oChigh input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower Short Circuit Ratingon-state voltage drop varies only moderately between 25oC Low Conduction Lossand 150oC.The IGBT is ideal for many high voltage switching Packagingapplications operating at moderate frequencies where low JEDEC TO-220ABconduction losses are essential, such as: AC and DC motor EMITTERcontrols, power supplies and drivers for s