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MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1PK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 350 mW TJ, TSTG Operating Junction and Storage Temperature Range -55 150 C Electrical Characteristics Ta=25 C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 75 V BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 40 V BVEBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 6 V ICBO Collector Cut-off Current VCB = 60V, IE = 0 0.01 A hFE DC Current Gain * VCE = 10V, IC = 0.1mA 35 VCE = 10V, IC = 1m

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