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MMBT2222AKNPN Epitaxial Silicon TransistorGeneral Purpose TransistorMarking31PK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 75 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Power Dissipation 350 mWTJ, TSTG Operating Junction and Storage Temperature Range -55 ~ 150 CElectrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. UnitsBVCBO Collector-Base Breakdown Voltage IC = 10A, IE = 0 75 VBVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 40 VBVEBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 6 VICBO Collector Cut-off Current VCB = 60V, IE = 0 0.01 AhFE DC Current Gain * VCE = 10V, IC = 0.1mA 35VCE = 10V, IC = 1m