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N N-CHANNEL MOSFET FHP10N65A/FHF10N65A MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.8 @Vgs=10V 100% 100% avalanche tested Qg-typ 29nC dv/dt Improved dv/dt capability RoHS RoHS product APPLICATION High efficiency switch mode power supplies Electronic ballast LED LED power supply Package Equivalent Circuit TO-220 TO-220F FHP FHF ABSOLUTE RATINGS (Tc=25 ) Value Parameter Symbol FHP10N65A FHF10N65A Unit VDS 650 V Drain-Source Voltage * ID TC=25 10* A Drain Current -continuous * ID TC=100 ) 6.2* A 1 IDM 40* A Drain Current pulse note 1 VGS 30 V Gate-Source Voltage 2 EAS 700 mJ Single Pulsed Avalanche

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 fhp10n65a fhf10n65a.pdf Проектирование, MOSFET, Мощность

 fhp10n65a fhf10n65a.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 fhp10n65a fhf10n65a.pdf База данных, Инновации, ИМС, Транзисторы