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SEMICONDUCTOR IRF3710 TECHNICAL DATA N-Channel Power MOSFET (100V/59A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 1.Gate 2.Drain 3.Source V 100 V DSS I (Tc=25 ) 59 A D I (Tc=100 ) 42 A D I 240 A DM V 20 V GSS I 15 A AR E 170 mJ AS P (Tc=25 ) 160 W D T ,T -55 to 150 J STG R 40 /W JA Electrical Characteristics(Ta=25 ) Symbol Test Conditions Min Typ Max Unit BV V =0V I =250 A 100 V DSS GS D V =100V V =0V DS GS 20 A I DSS V =100V V =0V T =125 DS GS J 250 A I V = 20V V =0V GSS GS DS 0.2 A V V =V I =250 A GS(th) DS GS D 2.0 4.0 V