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SEMICONDUCTOR MJE13003A TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1.5A A 4 70 MAX E K B 4 80 MAX High Collector Voltage VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _ MAXIMUM RATING (Ta=25 C) H J 14 00 + 0 50 K 0 55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2 30 M 0 45 MAX VCBO N 1 00 Collector-Base Voltage 700 V 1 2 3 VCEO Collector-Emitter Voltage 400 V 1 EMITTER 2 COLLECTOR VEBO Emitter-Base Voltage 9 V 3 BASE DC IC 1.5 Collector Current A Pulse ICP 3 TO-92 IB Collector Power Dissipation 0.75 A PC Collector Power Dissipation 1.1 W Junction Temperature Tj 150 C Storage Temperature Range Tstg -55 150 C ELECTRICAL CHARACTERIST