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SEMICONDUCTOR MJE13003ATECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED B CSWITCHING APPLICATION.FEATURESExcellent Switching TimesN DIM MILLIMETERS: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5AA 4 70 MAXEKB 4 80 MAXHigh Collector Voltage : VCBO=700V. GC 3 70 MAXDD 0 45E 1 00F 1 27G 0 85H 0 45_MAXIMUM RATING (Ta=25C) HJ 14 00 + 0 50K 0 55 MAXF FCHARACTERISTIC SYMBOL RATING UNIT L 2 30M 0 45 MAXVCBO N 1 00Collector-Base Voltage 700 V1 2 3VCEOCollector-Emitter Voltage 400 V1 EMITTER2 COLLECTORVEBOEmitter-Base Voltage 9 V3 BASEDC IC 1.5Collector Current APulse ICP 3TO-92IBCollector Power Dissipation 0.75 APCCollector Power Dissipation 1.1 WJunction Temperature Tj 150 CStorage Temperature Range Tstg -55~150 CELECTRICAL CHARACTERIST