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Скачать даташит для mje13007dv7:

mje13007dv7mje13007dv7

MJE13007DV7 NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V V 400 CEO V 9.0 V EBO I 7 A C I 16 A CP I 4.0 A B P (Ta=25 ) 2 W C P (Tc=25 ) 80 W C T 150 j T -55 150 stg /Electrical characteristics(Ta=25 ) Rating Symbol Test condition Unit Min Typ Max V I =1mA I =0 700 V CBO C E V I =10mA I =0 400 V CEO C B V I =1mA I =0 9.0 V EBO E C I V =700V I =0 0.1 mA CBO CB E I V =400V I =0 0.1 mA CEO CE B I V =9.0V I =0 0.1 mA EBO EB C h V =5.0V I =2.0A 10 40 FE(1

 

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 mje13007dv7.pdf Проектирование, MOSFET, Мощность

 mje13007dv7.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mje13007dv7.pdf База данных, Инновации, ИМС, Транзисторы

 

 

 


 
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