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2SK3697-01 N-CHANNEL SILICON POWER MOSFET 200407 Outline Drawings (mm) FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 600 V VDSX 600 V VGS=-30V Continuous Drain Current ID 42 A 2.7 A Ta=25 C Equivalent circuit schematic Pulsed Drain Current ID(puls] 168 A Drain(D) Gate-Source Voltage VGS 30 V

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 2sk3697-01.pdf Проектирование, MOSFET, Мощность

 2sk3697-01.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sk3697-01.pdf База данных, Инновации, ИМС, Транзисторы