Скачать даташит для s9013:

S9 013 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 High Collector Current. Complementary to S9012. Excellent hFE Linearity. Marking J3 Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V C V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power Dissipation 300 mW C B E R JA Thermal Resistance From Junction To Ambient 416 /W T Junction Temperature 150 j T Storage Temperature -55 +150 stg Electrical Characteristics (T=25 Unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 5 V Collector cut-off