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S9 013SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23High Collector Current. Complementary to S9012. Excellent hFE Linearity. Marking: J3Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V CV Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 5 V EBOI Collector Current 500 mA CP Collector Power Dissipation 300 mW CB ERJA Thermal Resistance From Junction To Ambient 416 /W T Junction Temperature 150 jT Storage Temperature -55+150 stgElectrical Characteristics (T=25 Unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 5 V Collector cut-off