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2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base voltage VEBO 55V Collector current IC 1.5 1.5 A Collector peak current IC(peak) 33A Collector power dissipation PC 11W PC*1 20 20 W Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C Note 1. Value at TC = 25 C. 2 2SD669, 2SD669A Electrical Characteristics (Ta = 25 C) 2SD669 2SD669A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 180 180 V IC = 1 mA, IE = 0 breakdown voltage Collector to emitter