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2SD669, 2SD669ASilicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB649/AOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SD669, 2SD669AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD669 2SD669A UnitCollector to base voltage VCBO 180 180 VCollector to emitter voltage VCEO 120 160 VEmitter to base voltage VEBO 55VCollector current IC 1.5 1.5 ACollector peak current IC(peak) 33ACollector power dissipation PC 11WPC*1 20 20 WJunction temperature Tj 150 150 CStorage temperature Tstg 55 to +150 55 to +150 CNote: 1. Value at TC = 25 C.22SD669, 2SD669AElectrical Characteristics (Ta = 25C)2SD669 2SD669AItem Symbol Min Typ Max Min Typ Max Unit Test conditionsCollector to base V(BR)CBO 180 180 V IC = 1 mA, IE = 0breakdown voltageCollector to emitter