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Spec. No. HE6834 HI-SINCERITY Issued Date 1998.02.01 Revised Date 2004.09.07 MICROELECTRONICS CORP. Page No. 1/4 HMBT2369 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2369 is designed for general purpose switching and amplifier applications. SOT-23 Features Low Collector Saturation Voltage High speed switching Transistor Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 +150 C Junction Temperature ................................................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25 C) .......................................................................................................

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 hmbt2369.pdf Проектирование, MOSFET, Мощность

 hmbt2369.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 hmbt2369.pdf База данных, Инновации, ИМС, Транзисторы