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Spec. No. : HE6834HI-SINCERITYIssued Date : 1998.02.01Revised Date : 2004.09.07MICROELECTRONICS CORP.Page No. : 1/4HMBT2369NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT2369 is designed for general purpose switching and amplifierapplications.SOT-23Features Low Collector Saturation Voltage High speed switching TransistorAbsolute Maximum Ratings Maximum TemperaturesStorage Temperature ........................................................................................................................... -55 ~ +150 CJunction Temperature ................................................................................................................... +150 C Maximum Maximum Power DissipationTotal Power Dissipation (TA=25C) .......................................................................................................