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Spec. No. HE6510 HI-SINCERITY Issued Date 1996.07.15 Revised Date 2004.08.16 MICROELECTRONICS CORP. Page No. 1/5 HSD667A SILICON NPN EPITAXIAL Description Low Frequency Power Amplifier Complementary Pair With HSB647A. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 +150 C Junction Temperature ..................................................................................................................... 150 C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25 C) ............................................................................................................... 900 mW Maximum Voltages and Currents (TA=25 C) VCBO Collector to Base Voltage .......................

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