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HY10N65T / HY10N65FT 650V / 10A 650V, RDS(ON)=1.0 @VGS=10V, ID=5.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S S Mechanical Information TO-220AB ITO-220AB Case TO-220AB / ITO-220AB Molded Plastic Terminals Solderable per MIL-STD-750,Method 2026 2 Drain Marking & Ordering Information TYPE MARKING PACKAGE PACKING 1 Gate Gate HY10N65T 10N65T TO-220AB 50PCS/TUBE Source 3 HY10N65FT 10N65FT ITO-220AB 50PCS/TUBE Absolute Maximum Ratings (TC=25OC unless otherwise noted ) Parameter Symbol HY10N65T HY10N65FT Uni ts D rain-Source Voltage VD S 650 V Gate-S ource Voltage VGS +30 V C ont