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HY10N65T / HY10N65FT650V / 10A650V, RDS(ON)=1.0@VGS=10V, ID=5.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G33DDSSMechanical InformationTO-220AB ITO-220AB Case: TO-220AB / ITO-220AB Molded Plastic Terminals : Solderable per MIL-STD-750,Method 20262 DrainMarking & Ordering InformationTYPE MARKING PACKAGE PACKING1GateGateHY10N65T 10N65T TO-220AB 50PCS/TUBESource3HY10N65FT 10N65FT ITO-220AB 50PCS/TUBEAbsolute Maximum Ratings (TC=25OC unless otherwise noted )Parameter Symbol HY10N65T HY10N65FT Uni tsD rain-Source Voltage VD S 650 VGate-S ource Voltage VGS +30 VC ont

 

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 hy10n65t.pdf Проектирование, MOSFET, Мощность

 hy10n65t.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 hy10n65t.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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