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isc Silicon PNP Power Transistor 2SA1214 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V (Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -2 A C Collector Power Dissipation 1.5 @ T =25 a P W C Total Power Dissipation 25 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1214 ELECTRICAL CHARACTERISTICS T =25 unless o